| PART |
Description |
Maker |
| SY88803V03 SY88803VKI SY88803VKITR |
3.3V/5V 155Mbps PECL LOW POWER LIMITING POST AMPLIFIER W/TTL LOS
|
Micrel Semiconductor
|
| SY88803VKC SY88803VKCTR SY88803VKG SY88803VKGTR SY |
3.3V/5V 155Mbps PECL LOW POWER LIMITING POST AMPLIFIER W/TTL LOS
|
MICREL INC
MICREL[Micrel Semiconductor]
|
| SY88973VMG SY88973VKITR SY88973VMGTR SY88973VMI SY |
3.3V/5V 3.2Gbps CML LOW-POWER LIMITING POST AMPLIFIER W/TTL LOS
|
http://
MICREL[Micrel Semiconductor]
|
| SY84113BU-15 |
Low Power 2.5V 1.25Gbps Limiting Post Amplifier with Ultra Wide LOS Range
|
Micrel Semiconductor
|
| AM29DL323DB90WDIN AM29DL323DB120WDI AM29DL323DB120 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF450 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7228 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A IRFE430 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6802U with Standard Packaging
12V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRL7NJ3802 with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY044CM with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRFM140 with Standard Packaging
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRL5NJ7404 with Standard Packaging
150V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRF5M3415 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A JANTXV2N7222U with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7218 with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A IRFM260 with Standard Packaging
AME270461; A AME270461 with Standard Packaging x8/x16闪存EEPROM
AFC461; Qualified Part Number similar to AFC461 x8/x16闪存EEPROM
AME28461; A AME28461 with Standard Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A JANTXV2N6764 with Standard Packaging x8/x16闪存EEPROM
IR2113L6; A IR2113L6 with Standard Packaging x8/x16闪存EEPROM
-55V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A IRF5M4905 with Standard Packaging x8/x16闪存EEPROM
|
Spansion, Inc.
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| ULS-2812H-883 ULS-2802H-883 ULS-2012H-883 ULS-2022 |
N-CHANNEL 100V - O.33 Ohm - 2A SOT-223 STRIPFET POWER MOSFET
N-channel 500V - 2.5O - 4A - TO-220 PowerMESH™ II MOSFET
Single exclusive OR gate
Single bus buffer (3-state)
SINGLE 8 CHANNEL ANALOG MULTIPLEXERS-DEMULTIPLEXERS
Single 2-input OR gate
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
GPS PROCESSOR 八进制外设驱
Quad 2-input nand gate 2输入与非
Single inverter 单反相器
N-channel 100V - 0.32 O - 5A - TO-251/TO-252 STripFET™ Power MOSFET
|
Allegro MicroSystems, Inc.
Panasonic, Corp.
|
| NTLUS3A18PZ NTLUS3A18PZTAG NTLUS3A18PZTBG NTLUS3A1 |
?0 V, ?.2 A, Single P?Channel, 2.0x2.0x0.55 mm Cool UDFN Package
Power MOSFET ?0 V, ?.2 A, Single P?Channel,
|
ON Semiconductor
|
| NVD5117PL NVD5117PLT4G |
Power MOSFET, -60 V, -61 A, 16 mΩ, Single P-Channel
?0 V, 16 m, ?1 A, Single P?Channel
|
ON Semiconductor
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
